JPS6150389B2 - - Google Patents
Info
- Publication number
- JPS6150389B2 JPS6150389B2 JP54028558A JP2855879A JPS6150389B2 JP S6150389 B2 JPS6150389 B2 JP S6150389B2 JP 54028558 A JP54028558 A JP 54028558A JP 2855879 A JP2855879 A JP 2855879A JP S6150389 B2 JPS6150389 B2 JP S6150389B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter
- base region
- base
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2614—Circuits therefor for testing bipolar transistors for measuring gain factor thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2855879A JPS55120164A (en) | 1979-03-12 | 1979-03-12 | Semiconductor device |
EP80300727A EP0016596B1 (en) | 1979-03-12 | 1980-03-10 | Semiconductor device having a monitor pattern and method of monitoring the same |
DE8080300727T DE3068647D1 (en) | 1979-03-12 | 1980-03-10 | Semiconductor device having a monitor pattern and method of monitoring the same |
US06/128,881 US4364010A (en) | 1979-03-12 | 1980-03-10 | Semiconductor device with monitor pattern, and a method of monitoring device parameters |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2855879A JPS55120164A (en) | 1979-03-12 | 1979-03-12 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55120164A JPS55120164A (en) | 1980-09-16 |
JPS6150389B2 true JPS6150389B2 (en]) | 1986-11-04 |
Family
ID=12251964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2855879A Granted JPS55120164A (en) | 1979-03-12 | 1979-03-12 | Semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4364010A (en]) |
EP (1) | EP0016596B1 (en]) |
JP (1) | JPS55120164A (en]) |
DE (1) | DE3068647D1 (en]) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439727A (en) * | 1981-12-21 | 1984-03-27 | Ibm Corporation | Low capacitance pad for semiconductor chip testing |
GB2176653B (en) * | 1985-06-20 | 1988-06-15 | Gen Electric Plc | Method of manufacturing integrated circuits |
TW248612B (en]) * | 1993-03-31 | 1995-06-01 | Siemens Ag | |
DE69426999T2 (de) * | 1993-04-30 | 2001-08-23 | Canon K.K., Tokio/Tokyo | Basiskörper für einen Farbstrahlkopf, Farbstrahlkopf damit versehen und Herstellungsverfahren |
KR100531952B1 (ko) * | 2003-01-30 | 2005-11-30 | 동부아남반도체 주식회사 | 얕은 트랜치 절연 프로파일의 모니터링 패턴 형성방법 |
US7296871B2 (en) * | 2004-12-29 | 2007-11-20 | Lexmark International, Inc. | Device and structure arrangements for integrated circuits and methods for analyzing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3815025A (en) * | 1971-10-18 | 1974-06-04 | Ibm | Large-scale integrated circuit testing structure |
US4079505A (en) * | 1974-03-14 | 1978-03-21 | Fujitsu Limited | Method for manufacturing a transistor |
DE2516396C3 (de) | 1975-04-15 | 1981-11-19 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Halbleiterbauelement mit einer Diode |
US4176258A (en) * | 1978-05-01 | 1979-11-27 | Intel Corporation | Method and circuit for checking integrated circuit chips |
-
1979
- 1979-03-12 JP JP2855879A patent/JPS55120164A/ja active Granted
-
1980
- 1980-03-10 EP EP80300727A patent/EP0016596B1/en not_active Expired
- 1980-03-10 DE DE8080300727T patent/DE3068647D1/de not_active Expired - Lifetime
- 1980-03-10 US US06/128,881 patent/US4364010A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0016596B1 (en) | 1984-07-25 |
EP0016596A1 (en) | 1980-10-01 |
DE3068647D1 (en) | 1984-08-30 |
JPS55120164A (en) | 1980-09-16 |
US4364010A (en) | 1982-12-14 |
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